3sk41 - Datasheet

Due to its high-speed switching capabilities, low noise figure, and linear transfer traits, the 3SK41 is commonly found in:

Understanding the 3SK41 Datasheet: A Guide to the Classic Dual-Gate GaAs MESFET

Here’s a concise summary of the 3SK41 MOSFET's key specifications and typical datasheet details:

The reveals a component that was far ahead of its time. With its 20V breakdown, 200mW dissipation, and 3dB noise figure, it enabled affordable, high-performance VHF radios for decades. While you shouldn't use it in a new mass-production design, understanding the 3SK41 is essential for restoring classic Sony, Kenwood, and Icom receivers. 3sk41 datasheet

Connected to ground/common loop, often shared with the metal shield. Gate 1 (G1) The primary RF signal input pin; dictates transconductance. Pin 3 Gate 2 (G2)

One of the most common reasons for downloading a is to identify the pin configuration. The 3SK41 is typically packaged in a TO-72 metal can (4-pin) or a SIP (Single In-line Package) plastic case.

This is the core of the . These values assume a common-source amplifier configuration. Due to its high-speed switching capabilities, low noise

The 3SK41 has the following electrical characteristics:

To download the complete PDF graphic layout, search archiving platforms like AllDatasheet .

While this article consolidates the critical information, some users need the original scanned document. Connected to ground/common loop, often shared with the

: By varying the voltage on the second gate ( VG2Scap V sub cap G 2 cap S end-sub ), the gain of the transistor can be easily controlled.

: The dual-gate structure allows one gate to receive the RF signal and the other to receive the Local Oscillator (LO) signal, resulting in efficient mixing.

If you are looking to replace or integrate this component into a design, let me know:

The 3SK41 is a silicon N-channel dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced primarily by Hitachi (now Renesas) and later by NEC. Unlike a standard JFET or single-gate MOSFET, the dual-gate architecture offers a unique advantage: it combines the low-noise characteristics of a JFET with the automatic gain control (AGC) capability of a bipolar transistor.